Rohm’s latest range of SiC Schottky barrier diodes (SBDs) feature a reverse recovery time of 15ns. This is significantly less than the 35 to 50ns of conventional Si-based diodes. Reverse recovery time ...

The introduction of silicon carbide (SiC) diodes has been a welcome solution to the reverse recovery losses in continuous conduction mode (CCM) boost power factor corrector (PFC) converters. While SiC ...

Infineon Technologies AG has started to commercially produce Schottky diodes based on silicon carbide (SiC) technology in an effort to provide a high-performance alternative to silicon and gallium ...

ON Semiconductor has extended its SiC diode portfolio by introducing its newest family of 650 V SiC Schottky diodes. The diodes’ silicon carbide technology provides higher switching capabilities with ...

Featuring a merged PIN Schottky (MPS) design, the devices combine high surge current robustness with low forward voltage drop, capacitive charge, and reverse leakage current to increase efficiency and ...

Although they are usually limited to only two leads, rectifiers and diodes play an important role in power electronic systems. In 2011, many types of rectifier/diodes were introduced, from bridge ...

Solar microinverters require high performance diodes to maximize the energy harvested from solar panels while reducing the cost per watt. Silicon Carbide Schottky diodes could provide the needed ...

NEW DELHI, INDIA: New dual-configuration Schottky silicon-carbide (SiC) diodes from STMicroelectronics are the first such devices in the industry with a voltage rating of 650V per diode in a choice of ...

Vishay Intertechnology VSH recently launched Gen 3 1200 V silicon carbide (SiC) Schottky diodes. The diodes boast high surge current robustness, low forward voltage drop, capacitive charge, and ...

There are at least two phases to learning about electronics. In the first phase, you learn about how components are supposed to work. In the second phase, you learn about how they really work. Wires ...