The RJF0605DPD is silicon N-channel MOSFET power switching featuring a built-in over temperature shutdown circuit. It has latch type shut down operation and a built-in current limitation circuit.The ...

The HAF2007(L) and HAF2007(S) is silicon N-channel MOSFET power switching featuring 4 to 6 V gate drive logic level operation. It has high endurance capability and built-in over-temperature shutdown ...

Texas Instruments introduced a new 60V N-channel FemtoFET power transistor that provides low resistance: %90 below traditional 60V load switches, reducing power loss in end-systems. Texas Instruments ...

BLOOMINGTON, Minn. & AUSTIN, Texas--(BUSINESS WIRE)--SkyWater Technology (NASDAQ: SKYT) and Applied Novel Devices, Inc. (AND) today announced a major industry breakthrough with new transistor ...

Texas Instruments (TI) (NASDAQ: TXN) introduced 11 new N-channel power MOSFETs to its NexFET product line, including the 25-V CSD16570Q5B and 30-V CSD17570Q5B for hot swap and ORing applications with ...

A research team has developed an n-channel diamond MOSFET (metal-oxide-semiconductor field-effect transistor). The developed n-channel diamond MOSFET provides a key step toward CMOS (complementary ...

The source voltage of a P-channel device is stationary when the device operates as an HS switch. Conversely, the source voltage of an N-channel device used as an HS switch varies between the low side ...

Over the recent weeks here at Hackaday, we’ve been taking a look at the humble transistor. In a series whose impetus came from a friend musing upon his students arriving with highly developed ...

(Left) Atomic force microscope image of diamond epilayer surface morphology. (Middle) Optical microscope image of the diamond MOSFET. (Right) Performance of the MOSFET measured at 300°C. The drain ...

This research was published in Advanced Science ("High-temperature and high-electron mobility metal-oxide-semiconductor field-effect transistors based on n-type diamond"). World’s First N-Channel ...